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VEGA powers KIT's new world record!

KIT researchers transfer 26 Terabits in one second with the VEGA DAC

For nearly two decades, Micram UltraFastSiGe™ technology has consistently delivered spectacular performance years ahead of its time, enabling visionary developers to push the limits of data transmission speed and bandwidth. In May researchers at Karlsruhe Institute of Technology announced a new world record of 26 Tbit/s (the equivalent of 700 DVDs per second) over a single wavelength on a 50 kilometer-long strand of optical fiber, using a single laser beam. The Micram VEGA DAC, with its phenomenal performance and unique high speed FPGA interface, was a critical part of this historic effort by KIT.
 
Papers detailing KIT’s achievements with Micram VEGA are now available. In their latest paper, KIT researchers describe their VEGA-powered real-time OFDM transmitter operating at greater than 100 Gbit/s.
Electrical Real-Time Transmitter 
The electrical transmitter used in the experiment was built with 2 VEGA DACs as shown above.
 
"Real-time OFDM transmitters breaking the 100 Gbit/s barrier require high-performance, usually FPGA-based digital signal processing. Especially the Fourier transform as a key operation of any OFDM system must be optimized with respect to performance and chip area utilization. Here, an alternative to the widely adopted fast Fourier transform algorithm is demonstrated. Based on an extensive yet optimized use of pre-set look-up tables, the FPGA implementation supports fast reconfigurable channel equalization and switching times in the nanosecond range without re-loading any code. The potential of the concept by realizing the first real-time single polarization OFDM transmitter generating a 101.5 Gbit/s data stream by modulating 58 subcarriers with 16QAM is shown."

Many other technical papers on VEGA-powered research can be found through Micram's literature page.
 
KIT’s optical research team includes Professor Jürg Leuthold, David Hillerkuß, René Schmogrow, and Professors Wolfgang Freude and Christian Koos.
 
Other companies and institutions involved in KIT’s research were Agilent, Time-Bandwidth, Finisar, and the University of Southampton.
 
Learn more about Micram VEGA here. 
 
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Publications authored/co-authored by Micram staff or acknowledging Micram products:

  • R. Schmogrow, M. Winter, J. Leuthold, et al, "Real-time OFDM transmitter beyond 100Gbit/s", Optics Express, Vol. 19, Issue 13, June 2011.
  • R. Schmogrow, M. Winter, J. Leuthold, et al, "Real-Time Nyquist Pulse Modulation Transmitter Generating Rectangular Shaped Spectra of 112 Gbit/s 16QAM Signals", Advanced Photonics Congress 2011 - Paper SPMA5 (Toronto, Canada), June 2011.
  • D. Hillerkuss, R. Schmogrow, J. Leuthold, et al, "26 Tbit s-1 line-rate super-channel transmission utilizing all-optical fast Fourier transform processing", Nature Photonics (2011), May 2011. 
  • W. Freude, D. Hillerkuss, J. Leuthold, et al, "All-optical Real-time OFDM Transmitter and Receiver", CLEO Science and Innovations, (Baltimore, MD, USA), May 2011
  • B. Inan, O. Karakaja, P. Kainzmaier, S. Adhikai, V. Sleiffer, S. Jansen, et al, "Realization of a 23.9 Gb/s Real Time Optical-OFDM Transmitter with a 1024 Point IFFT", OFC 2011, (Los Angeles, CA, USA), March 2011.
  • S. Herbst, S. Bayer, H. Werntz, H. Griesser, "21 GHz Single-Band OFDM Transmitter with QPSK Modulated Subcarriers", OFC 2011, (Los Angeles, CA, USA), March 2011.
  • R. Schmogrow, B. Nebendahl, D. Hillerkuss, J. Leuthold, et al, "101.5 Gbit/s Real-Time OFDM Transmitter with 16QAM Modulated Subcarriers", OFC 2011, (Los Angeles, CA, USA), March 2011.
  • R. Schmogrow, D. Hillerkuss, B. Nebendahl, J. Leuthold, et al, "Real-Time Software-Defined Multiformat Transmitter Generating 64QAM at 28 GBaud", IEEE Photonics Technology Letters, Vol. 22, No. 21, November 2010.
  • M. Noelle, J. Hilt, M. Seimetz, R. Freund, "8x224 Gbit/s PDM 16QAM WDM Transmission with Real-Time Signal Processing at the Transmitter", ECOC 2010, (Torino, Italy), September 2010.
  • T. Ellermeyer, R. Schmid, A. Bielik, J. Rupeter, M. Moeller, "DA and AD Converters in SiGe Technology: Speed and Resolution for Ultra High Data Rate Applications", ECOC 2010, (Torino, Italy), September 2010.
  • D. Qian, T. Kwok, N. Cvijetic, J. Hu, T. Wang, "41.25 Gb/s Real-Time OFDM Receiver for Variable WDM-OFDMA-PON Transmission", ECOC 2010, (Torino, Italy), September 2010
  • R. Freund, M. Noelle, et al, "Single- and multi-carrier techniques to build up Tb/s per channel transmission systems", ICTON 2010, (Berlin, Germany), July 2010.
  • R. Freund, J. Hilt, C. Schubert et al, "High spectral effizient phase and quadrature amplitude modulation for optical fibre transmission", SPPCOM 2010, (Karlsruhe, Germany), June 2010. 
  • M. Möller, “Circuit design with SiGe HBT’s for future 100Gb/s transport networks”, in Workshop SiGe HBT’s towards THz applications, International Microwave Symposium IMS 2010, (Anaheim, CA, USA), May 2010.
  • R. Schmogrow, D. Hillerkuss, J. Leuthold, et al, "FPGA based 25 GBaud Multi Format Transmitter for Optical Communications", FCCM 2010 (Charlotte, NC, USA), May 2010.
  • D. Hillerkuss, T. Schellinger, R. Schmogrow, M. Winter, T. Vallaitis, R. Bonk, A. Marculescu, J. Li, M. Dreschmann, J. Meyer, S. Ben Ezra, N. Narkiss, B. Nebendahl, F. Parmigiani, P. Petropoulos, B. Resan, K. Weingarten, T. Ellermeyer, J. Lutz, M. Möller, M. Huebner, J. Becker, C. Koos, W. Freude, J. Leuthold, "Single Source Optical OFDM Transmitter and Optical FFT Receiver Demonstrated at Line Rates of 5.4 and 10.8 Tbit/s", post deadline paper, OFC 2010, (San Diego, CA, USA), March 2010.
  • Dayou Qian, Tyrone Tai-On Kwok, Neda Cvijetic, Junqiang Hu, Ting Wang, "41.25 Gb/s Real-Time OFDM Receiver for Variable Rate WDM-OFDMA-PON Transmission", post deadline paper, OFC 2010, (San Diego, CA, USA), March 2010.
  • M. Möller, “High-Speed Electronic Circuits for 100 Gb/s Transport Networks", invited paper OTHC6, OFC 2010, (San Diego, CA, USA), March 2010.
  • T. Webel und M. Möller, “The Transimpedance Stage as Active Loadresistor in High-Speed High-Voltage Output Drivers", in 2009 ProRISC, Workshop on Signal Processing, Integrated Systems and Circuits, (Veldhoven, The Netherlands), Nov. 2009
  • P. Ritter und M. Möller, “A 4 bit 10 GS/s Flash ADC frontend in SiGe technology with very low power consumption", in 2008 ProRISC, Workshop on Signal Processing, Integrated Systems and Circuits, (Veldhoven, The Netherlands), Nov. 2008.
  • T. Ellermeyer, J. Müllrich, J. Rupeter, H. Langenhagen, A. Bielik und M. Möller, “AD
    and DA Converters for Multi-Tone Transmission Systems    ”, in ECOC 2008, Workshop
    on Multi-Tone Transmission Techniques for Optical Networks, (Brussels, Belgium), Sep.
    21 2008.
  • M. Möller, “Challenges in Cell-Based Design of Very-High-Speed Si-Bipolar IC’s at 100 b/s”, IEEE J. Solid-State Circuits, vol. 43, pp. 1877–1888, September 2008. Invited paper.
  • T. Ellermeyer, J. Müllrich, H. Langenhagen, A. Bielik und M. Möller, “AD and AD
    Converters for 25 GS/s and Above",     in LEOS Summer Topicals 2008, (Acapulco, Mexico),
    July 2008. Invited paper.
  • M. Möller, “Efficient design of high-speed ICs beyond 100 Gb/s with special regard to iGe-bipolar technology", in Semiconductor Conference Dresden, SCD 2008, (Dresden, Germany), April 2008. Invited paper.
  • R. H. Derksen, M. Möller, C. Schubert, “100 Gbit/s full ETDM transmission technologies”, in 29th IEEE Compound Semiconductor IC (CISC) Symposium, (Portland, Oregon, USA), October 2007. Invited paper.
  • M. MÖLLER: Challenges in Cell-Based Design of Very-High-Speed Si-Bipolar IC's at 100 Gb/s, IEEE BIPOLAR/BiCMOS CIRCUITS AND TECHNOLOGY MEETING Boston, Massachusetts, October 1-2, 2007
  • K. SCHUH, B. JUNGINGER, E. LACH , G. VEITH , J. LUTZ , M. MÖLLER: Serial 107Gbit/s ETDM NRZ Transmission over 320km SSMF, OFC 2007, PD paper.
  • K. SCHUH, B. JUNGINGER, E. LACH , G. VEITH , J. LUTZ , M. MÖLLER: Serial 107Gbit/s ETDM NRZ Transmission over 320km SSMF, Journal of Ligthwave Technology, January 2007, Volume 25, Issue 1, p. 122-130.
  • C. SCHUBERT, R. H. DERKSEN, M. MÖLLER, R. LUDWIG, C.-J. WEISKE, J. LUTZ, S. FERBER, C. SCHMIDT-LANGHORST: 107 Gbit/s Transmission using an Integrated ETDM Reveiver, ECOC 2006, PD paper.
  • C. SCHUBERT, R. H. DERKSEN, G. LEHMANN, M. MÖLLER, R. LUDWIG, C.-J. WEISKE, J. LUTZ, S. FERBER, C. SCHMIDT-LANGHORST: Integrated 100 Gbit/s ETDM Reveiver in a Transmission Experiment over 480 km DMF, OFC 2006, PD paper.
  • U. DÜMLER, M. MÖLLER, A. BIELIK, T. ELLERMEYER, H. LANGENHAGEN, W. WALTHES, T. ELLERMEYER, J. MEJRI,: 86 Gbit/s SiGe receiver module with high sensitivity for 160×86 Gbit/s DWDM system, Electronics Letters, 5 January 2006, Volume 42, Issue 1, p. 21-22.
  • M. MÖLLER: Grenzen ausloten: Entwicklung integrierter Hochgeschwindigkeitsschaltungen, 2005 EEEfCOM.
  • M. MÖLLER: Exploring the Limits: Development of Integrated High-Speed Circuits, 2005 ProRISC and SAFE workshop plenary session.
  • W. STEINER, H.-M. REIN, J. MÜLLRICH, A. SCHILD: Reducing Substrate Coupling in 10 to 20 Gbit/s High-Gain Broadband Amplifiers, Proc. ESSCIRC: pp.299-302, 2002.
  • A. SCHILD, H.-M. REIN, J. MÜLLRICH, L. ALTENHAIN, J. BLANK, K. SCHRÖDINGER: Amplifier array for 12 parallel 10 Gb/s optical-fiber links fabricated in a SiGe production technology, IEEE 2002 RFIC Symposium, Seattle, June 2002.
  • T. ELLERMEYER: Monolithically integrated eye-opening analyzators for high-capacity fibre optic transmission systems (in German), PhD thesis, Ruhr-University Bochum, 2002.
  • E.A.M. KLUMPERINK, R. KREIENKAMP, T. ELLERMEYER, U. LANGMANN: Transmission Lines in CMOS: An Explorative Study, 12th Annual Workshop on Circuits, Systems and Signal Processing, Veldhoven, The Netherlands, 2001.
  • T. ELLERMEYER, U. LANGMANN, B. WEDDING, W. PÖHLMANN: A 10-Gb/s Eye-Opening Monitor IC for Decision Guided Adaptation of the Frequency Response of an Optical Receiver, IEEE Journal of Solid-State Circuits, 35(12): pp. 1958-1963, 2000.
  • J. MÜLLRICH, H. THURNER, E. MÜLLNER, J. F. JENSEN, W. E. STANCHINA, M. KARDOS, H.-M. REIN: High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links, IEEE Journal of Solid-State Circuits, 35(9): pp. 1260-1265, 2000.
  • R. SCHMID: Monolithically Integrated Driver Circuits in Si-Bipolar Technology for the Modulation of Lightwave Power in Optical-Fibre Systems with Highest Data Rates (in German), PhD thesis, Arbeitsgruppe Halbleiterbauelemente, Ruhr-University Bochum, 2000.
  • T. ELLERMEYER, U. LANGMANN, B. WEDDING, W. PÖHLMANN: A 10-Gb/s Eye-Opening Monitor IC for Decision Guided Adaptation of the Frequency Response of an Optical Receiver, International Solid-State Circuits Conference (ISSCC): pp. 50-51, 2000.
  • W. BOGNER, E. MÜLLNER, F. ZNIDARIC, M. MÖLLER, H.-M. REIN, C.J. WEISKE, E. GOTTWALD: A 40 Gb/s SiGe bipolar chipset for terabit optical networks, IEE Seminar on High performance semiconductor devices and circuits for communications, London, 2000.
  • R. SCHMID, T. F. MEISTER, M. REST, H.-M. REIN: SiGe Driver Circuit with High Output Amplitude Operating up to 23 Gb/s, IEEE Journal Solid-State Circuits, 35(11): pp. 886-891, 1999.
  • J. MÜLLRICH, E. MÜLLNER, J. F. JENSEN, B. STANCHINA, M. KARDOS, H. THURNER, H.-M. REIN: High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40 Gb/s optical-fiber TDM links, Proc. GaAs IC Symposium: pp. 99-102, Monterey, USA, October 1999.
  • J. MÜLLRICH, W. KLEIN, R. KHLIFI, H.-M. REIN: A SiGe regenerative frequency divider operating up to 63 GHz, Electronics Letters, 35(20): pp. 1730-1731, 1999.
  • M. MÖLLER, H.-M. REIN, E. GOTTWALD, T.F. MEISTER: SiGe Bipolar ICs with data rates from 40 to 60 Gb/s for future Fiber-Optic Systems, GAAS 99, 1999.
  • R. SCHMID, T. F. MEISTER, M. REST, H.-M. REIN: 23 Gbit/s SiGe Modulator Driver with 3.5 V Single-Ended Output Swing --Design Aspects and Measuring Results, INTERNATIONAL IEE MTT/AP WORKSHOP ON MMIC DESIGN, PACKAGING, AND SYSTEM APPLICATIONS: pp. 87-88, 1998.
  • M. MÖLLER: Design and optimization of monolithically integrated broadband amplifiers in Si-bipolar technology for optical transmission systems (in german), PhD thesis, Arbeitsgruppe Halbleiterbauelemente, Ruhr-University Bochum, 1998.
  • R. SCHMID, T. F. MEISTER, M. REST H.-M. REIN: 40 Gbit/s EAM driver IC in SiGe bipolar technology, Electronics Letters, 34(11): pp. 1095-1097, 1998.
  • J. MÜLLRICH, T. F. MEISTER, M. REST, W. BOGNER, A. SCHÖPFLIN, H.-M. REIN: 40 Gbit/s transimpedance amplifier in SiGe bipolar technology for the receiver in optical fibre TDM links, Electronics Letters, 34(5): pp. 452-453, 1998.
  • 13. R. SCHMID, T. F. MEISTER, M. NEUHÄUSER, A. FELDER, W. BOGNER, M. REST, J. RUPETER, H.-M. REIN: 20 Gbit/s Transimpedance Amplifier and Modulator Driver in SiGe Bipolar Technology, Electronics Letters, 33(13): pp. 1136-1137, 1997.
  • M. NEUHÄUSER, H. ZOJER, C. RAPPEL, F. FILIPIAK: Considerations about Gaintracking and EMI in a VLSI Mixed Signal BiCMOS Design - A Case Study, Proc. ESSCIRC '96, Neuchatel, Switzerland, September 1996.
  • M. NEUHÄUSER, H. ZOJER, C. RAPPEL, F. FILIPIAK: Considerations about Gaintracking and EMI in a VLSI Mixed Signal BiCMOS Design - A Case Study, Proc. ESSCIRC '96, Neuchatel, Switzerland, September 1996.
  • E. GOTTWALD, A. FELDER, H.-M. REIN, M. MÖLLER, M. WURZER, B. STEGMÜLLER, M. PLIHAL, J. BAUER, F. AURACHER, W. ZIRWAS, U. GAUBATZ, A. EBBERG, K. DRÖGEMÜLLER, C. WEISKE, G. FISCHER, W. BOGNER P. KRUMMRICH, U. FISCHER: Towards a 40 Gbit/s electrical time division multiplexed optical transmission system, Proc. ICCT '96, pp. 60-63, Beijing, China, 1996.
  • M. WURZER, T.F. MEISTER, H. SCHÄFER, H. KNAPP, J. BÖCK, R. STENGL, K. AUFINGER, M. FRANOSCH, M. REST, M. MÖLLER, H.-M. REIN, A. FELDER: 42 GHz Static Frequency Divider in a Si/SiGe Bipolar Technology, ISSCC, p. 86,87,122,123, 1997.
  • A. FELDER, M. MÖLLER, J. POPP, J. BÖCK, H.-M. REIN: 46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz Static Frequency Divider in Silicon Bipolar Technology, IEEE J. Solid-State Circuits, 31(4): pp. 481-486, 1996.
  • H.-M. REIN, M. MÖLLER: Design considerations of 10 to 50 Gb/s digital and analog Si-bipolar ICs, IEEE J. Solid-State Circuits, 31(8): pp. 1076-1090, 1996.
  • TREITINGER, MEISTER, FELDER, BÖCK, MOLZER, AUFINGER, KÖPL, SCHREITER, POPP, BOGUTH, OHNEMUS, REST, SCHUMANN, SIMBÜRGER, KNAPP, WURZER, WEGER, REIN, MÖLLER, MELCHIOR, WIELAND: High-Speed Switching Electronics and Interconnects in silicon and Si/SiGe Bipolar Technologies: Status and Perspectives, Proc. 21st Eur. Conf. on Opt. Comm. (ECOC'95), Ti.A.2.2: p. 189, cont. in Vol III, 1995.
  • M. MÖLLER, H.-M. REIN, A. FELDER, J. POPP J. BÖCK: 50 Gb/s time-division multiplexer in Si-bipolar technology, Electronics Lett., 31: pp. 1431-1433, 1995.
  • A. FELDER, M. MÖLLER, J. POPP, J. BÖCK, M. REST, H.-M. REIN, L. TREITINGER: 30 GHz static 2:1 frequency divider and 46 Gb/s multiplexer/demultiplexer ICs in a 0.6 um Si bipolar technology, Proc. Symp. on VLSI Circuits, pp. 117-118, Kyoto, 1995.
  • M. NEUHÄUSER, M. MÖLLER, H.-M. REIN H. WERNZ: Low-noise, high-transimpedance Si-bipolar AGC amplifier for 10 Gb/s optical-fiber links, Photonics Technology Lett., 7: pp. 549-551, 1995.
  • M. MÖLLER, H.-M. REIN, H. WERNZ: 13 Gb/s Si-bipolar AGC amplifier with high gain and wide dynamic range for optical-fiber receivers, IEEE J. Solid-State Circuits, 29(7): pp. 815-822, 1994.
  • H.-M. REIN, R. SCHMID, P. WEGER, T. SMITH, T. HERZOG R. LACHNER: A versatile Si-bipolar driver circuit with high output voltage swing for external and direct modulation of laser diodes in 10 Gb/s optical-fiber links, IEEE Journal Solid-State Circuits, 29: pp. 1014-1021, 1994.
  • M. MÖLLER, H.-M. REIN, H. WERNZ: 15 Gb/s high-gain limiting amplifier fabricated in a Si-bipolar production technology, IEE Electronics Lett., 30(18): pp. 1519-1520, 1994.
 
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[Journal of Ligthwave Technology, January 2007, Volume 25, Number 1, p. 122-130]

Serial 107Gbit/s ETDM NRZ Transmission over 320km SSMF

K. Schuh,1 B. Junginger,1 E. Lach ,1 G. Veith ,1 J. Lutz ,2 M. Möller, 2,3

1 Alcatel Research and Innovation, Alcatel SEL AG, Holderäckerstrasse 35, D-70499 Stuttgart, Germany
2 MICRAM Microelectronic GmbH, Konrad-Zuse-Strasse 10, D-44801 Bochum, Germany
3 Chair of Electronics and Circuits, Saarland University

Abstract:

We report on a complete serial 107 Gbit/s ETDM NRZ transmission system and assess system performance in an error free transmission experiment over 320km SSMF with 3.5 dB OSNR margin.

 

Full article was published at OFC 2007, PD paper

 
 
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[IEEE BIPOLAR/BiCMOS CIRCUITS AND TECHNOLOGY MEETING 2007]

Challenges in Cell-Based Design of Very-High-Speed Si-Bipolar IC's at 100 Gb/s

M. Möller,1,2

1 MICRAM Microelectronic GmbH, Bochum, Germany
2 Saarland University, Department of Electronics and Circuits, Germany

Abstract:

A cell-based design concept for higher integrated SiGe-bipolar circuits at 100 Gb/s is presented and discussed with regard to performance limitations. The results of two cell-based designs are demonstrated by a 100 Gb/s 2:1 multiplexer IC and a 100 Gb/s 1:2 demultiplexer IC with onchip clock- and data-recovery.

 

Full article was published at 2007 IEEE BIPOLAR/BiCMOS CIRCUITS AND TECHNOLOGY MEETING Boston, Massachusetts, OCTOBER 1 – 2, 2007

 
 
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[ProRISC and SAFE workshop plenary session 2005]

MICRAM Microelectronic GmbH
Saarland University
Prof. Dr. M. Möller

Development of Integrated High-Speed Circuits

 

Attachments:
 Exploring Limits[Exploring Limits - Prof. Moeller]1654 Kb
 
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